Datasheet4U Logo Datasheet4U.com

BGSX22G2A10 - DPDT Antenna Cross Switch

Description

The BGSX22G2A10 RF MOS switch is specifically designed for LTE and WCDMA triple antenna applications.

This DPDT offers low insertion loss and low harmonic generation paired with high isolation between RF ports.

The switch is controlled via a GPIO interface.

Features

  • RF CMOS DPDT antenna cross switch with power handling capability of up to 36.5 dBm.
  • Suitable for multi-mode LTE and WCDMA multi antenna.

📥 Download Datasheet

Datasheet preview – BGSX22G2A10

Datasheet Details

Part number BGSX22G2A10
Manufacturer Infineon
File Size 155.51 KB
Description DPDT Antenna Cross Switch
Datasheet download datasheet BGSX22G2A10 Datasheet
Additional preview pages of the BGSX22G2A10 datasheet.
Other Datasheets by Infineon

Full PDF Text Transcription

Click to expand full text
SP001646670 BGSX22G2A10 DPDT Antenna Cross Switch Features  RF CMOS DPDT antenna cross switch with power handling capability of up to 36.5 dBm  Suitable for multi-mode LTE and WCDMA multi antenna applications  Ultra-low insertion loss and harmonics generation  0.1 to 6.0 GHz coverage  High port-to-port-isolation  No decoupling capacitors required if no DC applied on RF lines  General Purpose Input-Output (GPIO) Interface  Small form factor 1.15mm x 1.55mm  No power supply blocking required  High EMI robustness  RoHS and WEEE compliant package Description The BGSX22G2A10 RF MOS switch is specifically designed for LTE and WCDMA triple antenna applications. This DPDT offers low insertion loss and low harmonic generation paired with high isolation between RF ports.
Published: |