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BSB012N03LX3 G
OptiMOSTM3 Power-MOSFET
Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS(on) • Excellent gate charge x R DS(on) product (FOM) • Low parasitic inductance • Low profile (<0.7 mm) • 100% avalanche tested • 100% Rg Tested • Double-sided cooling • Pb-free plating; RoHS compliant
Product Summary V DS R DS(on),max ID 30 1.