BSC046N10NS3G
BSC046N10NS3G is Power-Transistor manufactured by Infineon.
Opti MOSTM3 Power-Transistor
Features
- Very low gate charge for high frequency applications
- Optimized for dc-dc conversion
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 150 °C operating temperature
- Pb-free lead plating; Ro HS pliant
- Qualified according to JEDEC1) for target application
- Halogen-free according to IEC61249-2-21
BSC046N10NS3 G
Product Summary
VDS RDS(on),max ID
100 V 4.6 m W 100 A PG-TDSON-8
Type BSC046N10NS3 G
Package PG-TDSON-8
Marking 046N10NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
T A=25 °C, R th JA=50 K/W2)
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse Gate source voltage
E AS V GS
I D=50 A, R GS=25...
