BSC046N10NS3G - Power-Transistor

Features

Very low gate charge for high frequency.

Infineon

Datasheet Details

Part number	BSC046N10NS3G
Manufacturer	Infineon
File Size	553.26 KB
Description	Power-Transistor
Datasheet	BSC046N10NS3G Datasheet
Additional preview pages of the BSC046N10NS3G datasheet.

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Full PDF Text Transcription

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OptiMOSTM3 Power-Transistor Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 BSC046N10NS3 G Product Summary VDS RDS(on),max ID 100 V 4.

Published: Dec 16, 2016 |