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BSC040N10NS5SC - 100V MOSFET

General Description

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Key Features

  • Dual-side cooled package with lowest Junction-top thermal resistance.
  • 175°C rated.
  • Optimized for high performance SMPS, e. g. sync. rec.
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSC040N10NS5SC MOSFET OptiMOSTM5Power-Transistor,100V Features •Dual-sidecooledpackagewithlowestJunction-topthermalresistance •175°Crated •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 4.0 mΩ ID 140 A Qoss 75 nC QG(0V..10V) 58 nC PG-WSON-8 tab 4 3 2 1 5 6 7 8 Drain Pin 5-8 Gate Pin 4 Source Pin 1-3, tab Type/OrderingCode BSC040N10NS5SC Package PG-WSON-8 Marking 040N10SC RelatedLinks - Final Data Sheet 1 Rev.2.