900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Infineon Technologies Electronic Components Datasheet

BSC106N025SG Datasheet

Power-Transistor

No Preview Available !

OptiMOS®2 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
• Qualified according to JEDEC1 for target applications
• Logic level / N-channel
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• Avalanche rated
• dv /dt rated
• Pb-free lead plating; RoHS compliant
BSC106N025S G
Product Summary
V DS
R DS(on),max
ID
25 V
10.6 m
30 A
PG-TDSON-8
Type
BSC106N025S G
Package
PG-TDSON-8
Marking
106N025S
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
T A=25 °C,
R thJA=45 K/W2)
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
I D,pulse
E AS
dv /dt
T C=25 °C3)
I D=30 A, R GS=25
I D=30 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=150 °C
Gate source voltage
Power dissipation
V GS
P tot
T C=25 °C
T A=25 °C,
R thJA=45 K/W2)
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Rev. 0.94
page 1
Value
30
30
13
120
80
6
±20
43
2.8
-55 ... 150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
2006-05-10


Infineon Technologies Electronic Components Datasheet

BSC106N025SG Datasheet

Power-Transistor

No Preview Available !

Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R thJC
R thJA
minimal footprint
6 cm2 cooling area2)
BSC106N025S G
min.
Values
typ.
Unit
max.
- - 2.4 K/W
- - 62
- - 45
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=20 µA
I DSS
V DS=25 V, V GS=0 V,
T j=25 °C
V DS=25 V, V GS=0 V,
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on) V GS=4.5 V, I D=15 A
V GS=10 V, I D=30 A
RG
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
25
1.2
-
-
-
-
-
-
20
- -V
1.6 2
0.1 1 µA
10 100
10 100 nA
13.4 16.7 m
8.8 10.6
1.2 -
41 - S
1)J-STD20 and JESD22
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3
Rev. 0.94
page 2
2006-05-10


Part Number BSC106N025SG
Description Power-Transistor
Maker Infineon
PDF Download

BSC106N025SG Datasheet PDF






Similar Datasheet

1 BSC106N025SG Power-Transistor
Infineon
2 BSC106N025SG Power-Transistor
Infineon Technologies





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy