BSC106N025SG
BSC106N025SG is Power-Transistor manufactured by Infineon.
BSC106N025S G
OptiMOS®2 Power-Transistor
Features
- Fast switching MOSFET for SMPS
- Optimized technology for notebook DC/DC converters
- Qualified according to JEDEC for target applications
- Logic level / N-channel
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Product Summary V DS R DS(on),max ID 25 10.6 30 V mΩ A
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- Superior thermal resistance
- Avalanche rated
- dv /dt rated
- Pb-free lead plating; RoHS pliant Type BSC106N025S G Package PG-TDSON-8 Marking 106N025S PG-TDSON-8
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C T A=25 °C, R...
