BSC106N025SG
BSC106N025SG is Power-Transistor manufactured by Infineon.
OptiMOS®2 Power-Transistor
Features
- Fast switching MOSFET for SMPS
- Optimized technology for notebook DC/DC converters
- Qualified according to JEDEC1 for target applications
- Logic level / N-channel
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- Superior thermal resistance
- Avalanche rated
- dv /dt rated
- Pb-free lead plating; RoHS pliant
BSC106N025S G
Product Summary V DS R DS(on),max ID
25 V 10.6 mΩ 30 A
PG-TDSON-8
Type BSC106N025S G
Package PG-TDSON-8
Marking 106N025S
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
T A=25 °C, R thJA=45...
