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BSD340N - MOSFET

General Description

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Key Features

  • Dual N-channel.
  • Enhancement mode.
  • Logic level (4.5V rated).
  • Avalanche rated.
  • Qualified according to AEC Q101.
  • 100% lead-free; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Table 1 Key Performance Parameters Parameter Value Unit VDS 30 V RDS(on),max, VGS=4.5 V 600 mΩ RDS(on),max, VGS=10 V 400 mΩ ID 0.88 A SOT-363-6 source (1) pin 1 gate (1) pin 2 drain (2) pin 3 drain (1) pin 6 gate (2) pin 5 source (2) pi.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSD340N MOSFET OptiMOSª2Small-Signal-Transistor,30V Features •DualN-channel •Enhancementmode •Logiclevel(4.5Vrated) •Avalancherated •QualifiedaccordingtoAECQ101 •100%lead-free;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max,VGS=4.5V 600 mΩ RDS(on),max,VGS=10V 400 mΩ ID 0.88 A SOT-363-6 source (1) pin 1 gate (1) pin 2 drain (2) pin 3 drain (1) pin 6 gate (2) pin 5 source (2) pin 4 Type/OrderingCode BSD340N Package PG-SOT363 Marking XGs RelatedLinks - Final Data Sheet 1 Rev.2.0,2016-06-23 OptiMOSª2Small-Signal-Transistor,30V BSD340N TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .