* Optimized for high performance buck converters
* Monolithic integrated Schottky-like diode
* Very low on-resistance RDS(on) @ VGS=4.5 V
* 100% avalanche tested
* N-channel
* Qualified according to JEDEC1) for target applications
* Pb-free le
BSZ0501NSI Datasheet (1.55 MB)
BSZ0501NSI
1.55 MB
Mosfet.
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 30 V BSZ0501NSI Data Sheet Rev. 2.0 Final Power Management.
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