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BTS6163D - Smart Highside Power Switch

General Description

N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology.

Providing embedded protective functions.

Key Features

  • Short circuit protection with latch.
  • Current limitation.
  • Overload protection.
  • Thermal shutdown with restart.
  • Overvoltage protection (including load dump).
  • Loss of ground protection.
  • Loss of Vbb protection (with external diode for charged inductive loads).
  • Very low standby current.
  • Fast demagnetization of inductive loads.
  • Electrostatic discharge (ESD) protection.
  • Optimized static electromagnetic co.

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Datasheet Details

Part number BTS6163D
Manufacturer Infineon
File Size 272.43 KB
Description Smart Highside Power Switch
Datasheet download datasheet BTS6163D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PROFET® BTS 6163 D Smart Highside Power Switch Reversave • Reverse battery protection by self turn on of power MOSFET Features • Short circuit protection with latch • Current limitation • Overload protection • Thermal shutdown with restart • Overvoltage protection (including load dump) • Loss of ground protection • Loss of Vbb protection (with external diode for charged inductive loads) • Very low standby current • Fast demagnetization of inductive loads • Electrostatic discharge (ESD) protection • Optimized static electromagnetic compatibility (EMC) • Green Product (RoHS compliant) • AEC qualified Product Summary Operating voltage Vbb(on) 5.5 ... 62 V On-state resistance RON 20 mΩ Nominal current IL(nom) 5.