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Infineon Technologies Electronic Components Datasheet

BUY25CS12K-11 Datasheet

HiRel RadHard Power-MOS

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Data Sheet BUY25CS12K-01
HiRel RadHard Power-MOS
Low RDS(on)
Single Event Effect (SEE) hardened
LET 85, Range: 118µm LET 55, Range: 90µm
VGS = -10V, VDS = 250V
VGS = -15V, VDS = 250V
VGS = -15V, VDS = 120V
VGS = -20V, VDS = 160V
Total Ionisation Dose (TID) hardened
100 kRad approved (Level R)
Hermetically sealed
N-channel
1
2
3
4
Type
BUY25CS12K-01
BUY25CS12K-11
Marking
-
-
Pin Configuration
123
D SG
G DS
Package
4
Not connected TO-257AA
Not connected TO-257AA
Maximum Ratings
Parameter
Drain Source Voltage
Gate Source Voltage
Drain Gate Voltage
Continuous Drain Current
TC = 25 °C
TC = 100 °C
Continuous Source Current
Drain Current Pulsed, tp limited by Tjmax
Total Power Dissipation 1)
Junction Temperature
Operating and Storage Temperature
Avalanche Energy
Symbol
VDS
VGS
VDG
ID
IS
IDM
Ptot
TJ
Top
EAS
Values
250
+/- 20
250
12.4
8
12.4
50
75
-55 to + 150
-55 to + 150
60
Thermal Characteristics
Thermal Resistance (Junction to Case)
Soldering Temperature
Notes.:
1) For TS ≤ 25°C. For TS > 25°C derating is required.
Rth JC
Tsol
1.66
250
Unit
V
V
V
A
A
Apk
W
°C
°C
mJ
K/W
°C
IFAG PMM RFS D HIR
1 of 8
March 2015


Infineon Technologies Electronic Components Datasheet

BUY25CS12K-11 Datasheet

HiRel RadHard Power-MOS

No Preview Available !

Data Sheet BUY25CS12K-01
Electrical Characteristics, at TA=25°C; unless otherwise specified
Parameter
Symbol
Values
Unit
min. max.
DC Characteristics
Breakdown Voltage Drain to Source
ID = 0.25mA, VGS = 0V
BVDSS
Gate Threshold Voltage
ID = 1.0mA, VDS VGS
VGS(th)
Gate to Source Leakage Current
VDS = 0V, VGS = +/- 20V
IGSS
Drain Current
VDS = 200V, VGS = 0V
Drain Source On Resistance 1)
VGS = 10V, ID = 8A
Source Drain Diode, Forward Voltage 1), 2)
VGS = 0V, IS = 12.4A
IDSS
rDS(ON)
VSD
250
2.0
-
-
-
-
-V
4.0 V
+/-100 nA
25 µA
0.13 Ω
1.2 V
AC Characteristics
Turn-on Delay Time
VDD = 50% VDS, ID = 8A, RG = 4.7Ω
Rise Time
VDD = 50% VDS, ID = 8A, RG = 4.7Ω
Turn-off Delay Time
VDD = 50% VDS, ID = 8A, RG = 4.7Ω
Fall Time
VDD = 50% VDS, ID = 8A, RG = 4.7Ω
Reverse Recovery Time
VDD < 50% VDS, ID = 12.4A
Common Source Input Capacitance
VDS = 100V, VGS = 0V, f = 1.0MHz
Common Source Output Capacitance
VDS = 100V, VGS = 0V, f = 1.0MHz
Common Source
Reverse Transfer Capacitance
VDS = 100V, VGS = 0V, f = 1.0MHz
Total Gate Charge
VDD = 50% VDS, VGS = 10V, ID = 12.4A
td(ON)
tr
td(OFF)
tf
trr
Ciss
Coss
Crss
QG
Notes.:
1) Pulsed Measurement: Pulse Width < 300µs, Duty Cycle <2.0%.
2) Measured within 2.0 mm of case.
-
-
-
-
-
1.3
90
1
-
25 ns
25 ns
35 ns
20 ns
400 ns
1.9 nF
150 pF
6 pF
42 nC
IFAG PMM RFS D HIR
2 of 8
March 2015


Part Number BUY25CS12K-11
Description HiRel RadHard Power-MOS
Maker Infineon
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