RD02LUS2 Overview
< Silicon RF Power MOS FET (Discrete) > RD02LUS2 RoHS pliance, Silicon MOSFET Power Transistor 470MHz, 2W, 3.6V RD02LUS2 is a MOS FET type transistor designed for VHF/UHF RF driver device. OUTLINE DRAWING FEATURES 1.High Power Gain and High Efficiency Pout>2.0W, Gp=10dB, Drain Effi. =60%typ @ f=470MHz, VDS=3.6V, Idq=140mA, Pin=0.2W 2.Integrated gate protection diode APPLICATION For driver stage of high power amplifiers in VHF/UHF Band mobile...