Datasheet Summary
< Silicon RF Power MOS FET (Discrete) >
RoHS pliance, Silicon MOSFET Power Transistor 470MHz, 2W, 3.6V
DESCRIPTION
RD02LUS2 is a MOS FET type transistor designed for VHF/UHF RF driver device.
OUTLINE DRAWING
Features
1.High Power Gain and High Efficiency Pout>2.0W, Gp=10dB, Drain Effi. =60%typ @ f=470MHz, VDS=3.6V, Idq=140mA, Pin=0.2W
2.Integrated gate protection diode
APPLICATION
For driver stage of high power amplifiers in VHF/UHF Band mobile radio sets.
RoHS PLIANT
RD02LUS2-501, T513 is EU RoHS pliant. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.
1. Lead in high...