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RD02MUS1 - Silicon MOSFET Power Transistor

General Description

RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.

Key Features

  • High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz,520MHz High Efficiency:65%typ. (175MHz) High Efficiency:65%typ. (520MHz) 2 3 (0.25) INDEX MARK (Gate) 0.2+/-0.05 For output stage of high power amplifiers In VHF/UHF band mobile radio sets. 0.9+/-0.1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1 0.2+/-0.05 (0.22) (0.22) (0.25) RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DESCRIPTION RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications. OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 6.0+/-0.15 1 4.9+/-0.15 1.0+/-0.05 FEATURES High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz,520MHz High Efficiency:65%typ.(175MHz) High Efficiency:65%typ.(520MHz) 2 3 (0.25) INDEX MARK (Gate) 0.2+/-0.05 For output stage of high power amplifiers In VHF/UHF band mobile radio sets. 0.9+/-0.1 APPLICATION Terminal No. 1.Drain (output) 2.Source (GND) 3.