RD02MUS1B Overview
Key Specifications
Description
< Silicon RF Power MOS FET (Discrete) > RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Junction temperature Storage temperature °C °C °C/W Note: Above parameters are guaranteed independently. SYMBOL IDSS IGSS Vth Pout1 D1 Pout2 D2 PARAMETER Drain c.
Key Features
- (175MHz) High Efficiency: 65%typ
- (520MHz) 0.2+/-0.05 0.9+/-0.1 Terminal No
- (output) (GND) (input) Note ( ):center value UNIT:mm
