RD02MUS1B - Silicon MOSFET Power Transistor

Product Overview

Mitsubishi Electric Semiconductor

Datasheet Details

Part number	RD02MUS1B
Manufacturer	Mitsubishi Electric Semiconductor
File Size	492.75 KB
Description	Silicon MOSFET Power Transistor
Datasheet	RD02MUS1B Datasheet
Additional preview pages of the RD02MUS1B datasheet.

Product details

Description

< Silicon RF Power MOS FET (Discrete) > RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Junction temperature Storage temperature Thermal resistance Junction to case Vgs=0V Vds=0V Tc=25°C Zg=Zl=50 CONDITIONS RATINGS 30 +/-20 21.9 0.1 1.5 150 -40 to +125 5.7 UNIT V

Features

High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz, 520MHz High Efficiency: 65%typ. (175MHz) High Efficiency: 65%typ. (520MHz) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm www. DataSheet. net/.

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Published: Nov 5, 2012 |