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RD02MUS1B - Silicon MOSFET Power Transistor

General Description

< Silicon RF Power MOS FET (Discrete) > RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation In

Key Features

  • High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz, 520MHz High Efficiency: 65%typ. (175MHz) High Efficiency: 65%typ. (520MHz) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm www. DataSheet. net/.

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< Silicon RF Power MOS FET (Discrete) > RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 RD02MUS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. RD02MUS1B improved a drain surge than RD02MUS1 by optimizing MOSFET structure. 6.0+/-0.15 0.2+/-0.05 1 4.9+/-0.15 1.0+/-0.05 2 3 INDEX MARK (Gate) (0.22) (0.25) (0.25) FEATURES High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz, 520MHz High Efficiency: 65%typ. (175MHz) High Efficiency: 65%typ. (520MHz) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm www.DataSheet.