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RD02MUS2 - RoHS Compliance

General Description

RD02MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.

This device have an interal monolithic zener diode from gate to source for ESD protection.

Key Features

  • High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz,520MHz.
  • High Efficiency:65%typ. (175MHz).
  • High Efficiency:65%typ. (520MHz).
  • Integrated gate protection diode 3 (0.25) INDEX MARK (Gate) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm.

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MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS2 0.2+/-0.05 (0.22) (0.22) (0.25) RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DESCRIPTION RD02MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications. This device have an interal monolithic zener diode from gate to source for ESD protection. OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 6.0+/-0.15 1 4.9+/-0.15 1.0+/-0.05 2 FEATURES •High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz,520MHz •High Efficiency:65%typ.(175MHz) •High Efficiency:65%typ.(520MHz) •Integrated gate protection diode 3 (0.25) INDEX MARK (Gate) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.