CY15V102QN Key Features
- 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8
- Virtually unlimited endurance of 10 trillion (1013) read/write cycles
- 121-year data retention (see “Data retention and endurance” on page 27)
- Infineon instant non-volatile write technology
- Advanced high-reliability ferroelectric process
- Fast serial peripheral interface (SPI)
- Up to 50 MHz frequency
- Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
- Sophisticated write protection scheme
- Hardware protection using the Write Protect (WP) pin
