D4065C5 Datasheet SiC Schottky Barrier diodes

Manufacturer: Infineon

Overview: SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDW40G65C5 Final Datasheet Rev. 2.2, 2013-01-15 Power Management & Multimarket 5th Generation thinQ!

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D4065C5 sic schottky barrier diodes by Infineon - Datasheet Preview

Datasheet Details

Part number	D4065C5
Manufacturer	Infineon
File Size	1.14 MB
Description	SiC Schottky Barrier diodes
Download	D4065C5 Download (PDF)

General Description

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

Thanks to the more compact design and thin-wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).

The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.

Key Features

Revolutionary semiconductor material - Silicon Carbide.
Benchmark switching behavior.
No reverse recovery/ No forward recovery.
Temperature independent switching behavior.
High surge current capability.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

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