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Infineon Technologies Electronic Components Datasheet

D4065C5 Datasheet

SiC Schottky Barrier diodes

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SiC
Silicon Carbide Diode
5th Generation thinQ!TM
650V SiC Schottky Diode
IDW40G65C5
Final Datasheet
Rev. 2.2, 2013-01-15
Power Management & Multimarket


Infineon Technologies Electronic Components Datasheet

D4065C5 Datasheet

SiC Schottky Barrier diodes

No Preview Available !

5th Generation thinQ!™ SiC Schottky Diode
1
Description
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
Schottky Barrier diodes. Thanks to the more compact design and thin-wafer
technology, the new family of products shows improved efficiency over all load
conditions, resulting from both the improved thermal characteristics and a lower
figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V
CoolMOS™ families: this ensures meeting the most stringent application
requirements in this voltage range.
Features
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1) for target applications
Breakdown voltage tested at 88 mA2)
Optimized for high temperature operation
Benefits
System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Applications
Switch mode power supply
Power factor correction
Solar inverter
Uninterruptible power supply
Table 1
Key Performance Parameters
Parameter
Value
Unit
VDC
650
V
QC; VR=400V
55
nC
EC; VR=400V
12.8
µJ
IF @ TC < 110°C 40
A
Table 2
Pin 1
n.c.
Pin Definition
Pin 2
Pin 3
C
A
Type / ordering Code
IDW40G65C5
Package
PG-TO247-3
Marking
D4065C5
IDW40G65C5
123
1
2
3
CASE
Related links
www.infineon.com/sic
1) J-STD20 and JESD22
2) All devices tested under avalanche conditions for a time periode of 10ms
Final Data Sheet
2
Rev. 2.2, 2013-01-15


Part Number D4065C5
Description SiC Schottky Barrier diodes
Maker Infineon
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