* High DC stability
* High short-circuit capability
* Low switching losses
* Low VCEsat
* Tvj op = 150°C
* VCEsat with positive temperature coefficient Mechanical Features
* AlSiC base plate for increased thermal cycling capability
* P
FD1000R33HE3-K Datasheet (579.12 KB)
FD1000R33HE3-K
579.12 KB
Igbt-modules.
FD1000R33HE3-K IHM-B Modul mit schnellem Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode IHM-B module with fast Trench/Fieldstop IGBT3 and Emitt.
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