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Infineon Technologies Electronic Components Datasheet

FF450R12KE4 Datasheet

IGBT-Module

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TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FF450R12KE4
62mmC-SerienModulmitTrench/FeldstoppIGBT4undEmitterControlledDiode
62mmC-seriesmodulewithtrench/fieldstopIGBT4andEmitterControlleddiode
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 100°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage

VorläufigeDaten
PreliminaryData
VCES 
IC nom
IC

ICRM 
Ptot 
VGES 
1200
450
520
900
2400
+/-20
V

A
A
A
W
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 450 A, VGE = 15 V
IC = 450 A, VGE = 15 V
IC = 450 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 17,0 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 450 A, VCE = 600 V
VGE = ±15 V
RGon = 1,0
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 450 A, VCE = 600 V
VGE = ±15 V
RGon = 1,0
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 450 A, VCE = 600 V
VGE = ±15 V
RGoff = 1,0
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 450 A, VCE = 600 V
VGE = ±15 V
RGoff = 1,0
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 450 A, VCE = 600 V, LS = 30 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 9000 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 1,0
Tvj = 150°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 450 A, VCE = 600 V, LS = 30 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 4000 V/µs (Tvj = 150°C)Tvj = 125°C
RGoff = 1,0
Tvj = 150°C
Kurzschlußverhalten
SCdata
VGE 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
tP 10 µs, Tvj = 150°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

VCE sat
VGEth
QG
RGint
Cies
Cres
ICES
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
RthCH
Tvj op
min. typ. max.
1,75 2,15
2,00
2,05
V
V
V
5,2 5,8 6,4 V
 3,70  µC
 1,9 
 28,0  nF
 1,10  nF
  5,0 mA
  400 nA
0,20
 0,25 
0,27
0,045
 0,05 
0,055
0,50
 0,60 
0,62
0,10
 0,16 
0,18
19,0
 30,0 
36,0
33,0
 50,0 
56,0
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ
mJ
mJ
 1800 
A
  0,062 K/W
 0,031
K/W
-40  150 °C
preparedby:MK
approvedby:WR
dateofpublication:2013-11-04
revision:2.2
1


Infineon Technologies Electronic Components Datasheet

FF450R12KE4 Datasheet

IGBT-Module

No Preview Available !

TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FF450R12KE4
Diode,Wechselrichter/Diode,Inverter
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
Tvj = 25°C
Dauergleichstrom
ContinuousDCforwardcurrent

PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent
tP = 1 ms
Grenzlastintegral
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
CharakteristischeWerte/CharacteristicValues
Durchlassspannung
Forwardvoltage
IF = 450 A, VGE = 0 V
IF = 450 A, VGE = 0 V
IF = 450 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Rückstromspitze
Peakreverserecoverycurrent
IF = 450 A, - diF/dt = 9000 A/µs (Tvj=150°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Sperrverzögerungsladung
Recoveredcharge
IF = 450 A, - diF/dt = 9000 A/µs (Tvj=150°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
AbschaltenergieproPuls
Reverserecoveryenergy
IF = 450 A, - diF/dt = 9000 A/µs (Tvj=150°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proDiode/perdiode
Wärmewiderstand,GehäusebisKühlkörper proDiode/perdiode
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

VorläufigeDaten
PreliminaryData
VRRM 
1200
V
IF  450  A
IFRM 
I²t 
900
34000
32000
A

A²s
A²s
VF
IRM
Qr
Erec
RthJC
min. typ. max.
1,70 2,25
1,75
1,75
V
V
V
490
 550 
560
A
A
A
44,0 µC
 80,0  µC
90,0 µC
19,0 mJ
 35,0  mJ
39,0 mJ
  0,11 K/W
RthCH
 0,055
K/W
Tvj op
-40

150 °C
preparedby:MK
approvedby:WR
dateofpublication:2013-11-04
revision:2.2
2


Part Number FF450R12KE4
Description IGBT-Module
Maker Infineon
Total Page 8 Pages
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