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Infineon Technologies Electronic Components Datasheet

FF650R17IE4 Datasheet

IGBT-Module

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TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FF650R17IE4
PrimePACK™2ModulundNTC
PrimePACK™2moduleandNTC
TypischeAnwendungen
• 3-Level-Applikationen
• Hilfsumrichter
• Hochleistungsumrichter
• Motorantriebe
• Windgeneratoren
ElektrischeEigenschaften
• ErweiterteSperrschichttemperaturTvjop
• GroßeDC-Festigkeit
• HoheStromdichte
• NiedrigeSchaltverluste
• Tvjop=150°C
• NiedrigesVCEsat
MechanischeEigenschaften
• GehäusemitCTI>400
• GroßeLuft-undKriechstrecken
• HoheLast-undthermischeWechselfestigkeit
• HoheLeistungsdichte
• Kupferbodenplatte
• Standardgehäuse
VCES = 1700V
IC nom = 650A / ICRM = 1300A
TypicalApplications
• 3-Level-Applications
• AuxiliaryInverters
• HighPowerConverters
• MotorDrives
• WindTurbines
ElectricalFeatures
• ExtendedOperationTemperatureTvjop
• HighDCStability
• HighCurrentDensity
• LowSwitchingLosses
• Tvjop=150°C
• LowVCEsat
MechanicalFeatures
• PackagewithCTI>400
• HighCreepageandClearanceDistances
• HighPowerandThermalCyclingCapability
• HighPowerDensity
• CopperBasePlate
• StandardHousing
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:TA
approvedby:PL
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
dateofpublication:2013-11-05
revision:3.3
1
Digit
1-5
6-11
12-19
20-21
22-23


Infineon Technologies Electronic Components Datasheet

FF650R17IE4 Datasheet

IGBT-Module

No Preview Available !

TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FF650R17IE4
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 100°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage

VCES 
IC nom
IC

ICRM 
Ptot 
VGES 
1700
650
930
1300
4,15
+/-20
V

A
A
A
 kW
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 650 A, VGE = 15 V
IC = 650 A, VGE = 15 V
IC = 650 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 24,0 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 1700 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 650 A, VCE = 900 V
VGE = ±15 V
RGon = 1,8
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 650 A, VCE = 900 V
VGE = ±15 V
RGon = 1,8
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 650 A, VCE = 900 V
VGE = ±15 V
RGoff = 2,7
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 650 A, VCE = 900 V
VGE = ±15 V
RGoff = 2,7
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 650 A, VCE = 900 V, LS = 45 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 5000 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 1,8
Tvj = 150°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 650 A, VCE = 900 V, LS = 45 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 3200 V/µs (Tvj = 150°C)Tvj = 125°C
RGoff = 2,7
Tvj = 150°C
Kurzschlußverhalten
SCdata
VGE 15 V, VCC = 1000 V
VCEmax = VCES -LsCE ·di/dt
tP 10 µs, Tvj = 150°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

VCE sat
VGEth
QG
RGint
Cies
Cres
ICES
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
RthCH
Tvj op
min. typ. max.
2,00 2,45
2,35 2,80
2,45
V
V
V
5,2 5,8 6,4 V
 7,00  µC
 2,3 
 54,0  nF
 1,70  nF
  5,0 mA
  400 nA
0,55
 0,60 
0,60
µs
µs
µs
0,09
 0,11 
0,12
µs
µs
µs
1,00
 1,25 
1,30
µs
µs
µs
0,29
 0,49 
0,57
µs
µs
µs
205 mJ
 300  mJ
320 mJ
140 mJ
 205  mJ
230 mJ
 2700 
A
  36,0 K/kW
 14,0
K/kW
-40  150 °C
preparedby:TA
approvedby:PL
dateofpublication:2013-11-05
revision:3.3
2


Part Number FF650R17IE4
Description IGBT-Module
Maker Infineon
Total Page 10 Pages
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