FF650R17IE4DP_B2 Description
TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module FF650R17IE4DP_B2 PrimePACK™2ModulmitTrench/FeldstoppIGBT4undEmitterControlledDiode PrimePACK™2modulewithTrench/FieldstopIGBT4andEmitterControlleddiode TypischeAnwendungen.
FF650R17IE4DP_B2 Key Features
- Highshort-circuitcapability
- Highsurgecurrentcapability
- Highcurrentdensity
- Tvjop=150°C
- VCEsatwithpositivetemperaturecoefficient
- Enlargeddiodeforregenerativeoperation
- 4kVAC1mininsulation
- PackagewithCTI>400
- Highcreepageandclearancedistances
- Highpowerandthermalcyclingcapability