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Infineon Technologies Electronic Components Datasheet

FF800R17KP4_B2 Datasheet

IGBT-Module

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TechnischeInformation/TechnicalInformation
IGBT-Modul
IGBT-Module
FF800R17KP4_B2
IHM-AModulmitTrench/FeldstoppIGBT4undEmitterControlled3Diode
IHM-AmodulewithTrench/FieldstopIGBT4andEmitterControlled3diode
TypischeAnwendungen
• Hochleistungsumrichter
• Mittelspannungsantriebe
• Motorantriebe
• Traktionsumrichter
• Windgeneratoren
ElektrischeEigenschaften
• ErweiterteSperrschichttemperaturTvjop
• NiedrigesVCEsat
• Tvjop=150°C
• VerstärkteDiodefürRückspeisebetrieb
MechanischeEigenschaften
• 4kVAC1minIsolationsfestigkeit
AlSiC Bodenplatte für erhöhte thermische
Lastwechselfestigkeit
• HoheLast-undthermischeWechselfestigkeit
• HoheLeistungsdichte
• Standardgehäuse
VCES = 1700V
IC nom = 800A / ICRM = 1600A
TypicalApplications
• Highpowerconverters
• Mediumvoltageconverters
• Motordrives
• Tractiondrives
• Windturbines
ElectricalFeatures
• ExtendedoperatingtemperatureTvjop
• LowVCEsat
• Tvjop=150°C
• Enlargeddiodeforregenerativeoperation
MechanicalFeatures
• 4kVAC1mininsulation
AlSiC base plate for increased thermal cycling
capability
• Highpowerandthermalcyclingcapability
• Highpowerdensity
• Standardhousing
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:WB
approvedby:IB
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
dateofpublication:2016-03-09
revision:V3.1
1
Digit
1-5
6-11
12-19
20-21
22-23


Infineon Technologies Electronic Components Datasheet

FF800R17KP4_B2 Datasheet

IGBT-Module

No Preview Available !

TechnischeInformation/TechnicalInformation
IGBT-Modul
IGBT-Module
FF800R17KP4_B2
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 80°C, Tvj max = 150°C
TC = 25°C, Tvj max = 150°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj max = 150°C
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
VCES 
IC nom
IC

ICRM 
Ptot 
VGES 
1700
800
1200
1600
4,85
+/-20
V

A
A
A
 kW
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 800 A, VGE = 15 V
IC = 800 A, VGE = 15 V
IC = 800 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 32,0 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 1700 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 800 A, VCE = 900 V
VGE = ±15 V
RGon = 0,8
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 800 A, VCE = 900 V
VGE = ±15 V
RGon = 0,8
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 800 A, VCE = 900 V
VGE = ±15 V
RGoff = 1,8
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 800 A, VCE = 900 V
VGE = ±15 V
RGoff = 1,8
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 800 A, VCE = 900 V, LS = 50 nH
VGE = ±15 V
RGon = 0,8
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 800 A, VCE = 900 V, LS = 50 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 3300 V/µs (Tvj = 150°C)Tvj = 125°C
RGoff = 1,8
Tvj = 150°C
Kurzschlußverhalten
SCdata
VGE 15 V, VCC = 1000 V
VCEmax = VCES -LsCE ·di/dt
tP 10 µs, Tvj = 150°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
VCE sat
min. typ. max.
1,80 2,20
2,10 2,60
2,20 2,70
V
V
V
VGEth 5,20 5,80 6,40 V
QG 8,30 µC
RGint
1,9
Cies 65,0 nF
Cres 2,10 nF
ICES 5,0 mA
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
400 nA
0,59 µs
0,63 µs
0,64 µs
0,14 µs
0,16 µs
0,16 µs
1,00 µs
1,15 µs
1,15 µs
0,32 µs
0,50 µs
0,55 µs
145 mJ
215 mJ
245 mJ
255 mJ
330 mJ
365 mJ
3400
A
25,7 K/kW
RthCH
22,8 K/kW
Tvj op
-40
150 °C
preparedby:WB
approvedby:IB
dateofpublication:2016-03-09
revision:V3.1
2


Part Number FF800R17KP4_B2
Description IGBT-Module
Maker Infineon
Total Page 10 Pages
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