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Infineon Technologies Electronic Components Datasheet

FF900R12IP4 Datasheet

IGBT

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TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FF900R12IP4
PrimePACK™2ModulmitTrench/FeldstoppIGBT4undEmitterControlled4DiodeundNTC
PrimePACK™2modulewithTrench/FieldstopIGBT4andEmitterControlled4diodeandNTC
VorläufigeDaten/PreliminaryData
TypischeAnwendungen
• Hilfsumrichter
• Hochleistungsumrichter
• Motorantriebe
• Traktionsumrichter
• USV-Systeme
• Windgeneratoren
VCES = 1200V
IC nom = 900A / ICRM = 1800A
TypicalApplications
• AuxiliaryInverters
• HighPowerConverters
• MotorDrives
• TractionDrives
• UPSSystems
• WindTurbines
ElektrischeEigenschaften
• ErweiterteSperrschichttemperaturTvjop
• GroßeDC-Festigkeit
Hohe Kurzschlussrobustheit, selbstlimitierender
Kurzschlussstrom
• SehrgroßeRobustheit
• VCEsatmitpositivemTemperaturkoeffizienten
• NiedrigesVCEsat
ElectricalFeatures
• ExtendedOperationTemperatureTvjop
• HighDCStability
High Short Circuit Capability, Self Limiting Short
CircuitCurrent
• UnbeatableRobustness
• VCEsatwithpositiveTemperatureCoefficient
• LowVCEsat
MechanischeEigenschaften
• 4kVAC1minIsolationsfestigkeit
• GehäusemitCTI>400
• GroßeLuft-undKriechstrecken
• HoheLast-undthermischeWechselfestigkeit
• HoheLeistungsdichte
MSoudbustlreatLarbkleelinCenodtheermischenWiderstand
BarcodeCode128
DMX-Code
MechanicalFeatures
• 4kVAC1minInsulation
• PackagewithCTI>400
• HighCreepageandClearanceDistances
• HighPowerandThermalCyclingCapability
• HighPowerDensity
• SubstrateforLowThermalResistance
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
Digit
1-5
6-11
12-19
20-21
22-23
preparedby:AC
approvedby:MS
dateofpublication:2013-11-05
revision:2.4
1


Infineon Technologies Electronic Components Datasheet

FF900R12IP4 Datasheet

IGBT

No Preview Available !

TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FF900R12IP4
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 100°C, Tvj max = 175°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage

VorläufigeDaten
PreliminaryData
VCES 
IC nom 
ICRM 
Ptot 
VGES 
1200
900
1800
5,10
+/-20
V
A
A
 kW
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 900 A, VGE = 15 V
IC = 900 A, VGE = 15 V
IC = 900 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 33,0 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 900 A, VCE = 600 V
VGE = ±15 V
RGon = 1,6
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 900 A, VCE = 600 V
VGE = ±15 V
RGon = 1,6
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 900 A, VCE = 600 V
VGE = ±15 V
RGoff = 1,6
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 900 A, VCE = 600 V
VGE = ±15 V
RGoff = 1,6
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 900 A, VCE = 600 V, LS = 45 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 4800 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 1,6
Tvj = 150°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 900 A, VCE = 600 V, LS = 45 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 2800 V/µs (Tvj = 150°C)Tvj = 125°C
RGoff = 1,6
Tvj = 150°C
Kurzschlußverhalten
SCdata
VGE 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
tP 10 µs, Tvj = 150°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

VCE sat
VGEth
QG
RGint
Cies
Cres
ICES
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
RthCH
Tvj op
min. typ. max.
1,70 2,05
2,00
2,10
V
V
V
5,0 5,8 6,5 V
 6,40  µC
 1,2 
 54,0  nF
 2,80  nF
  5,0 mA
  400 nA
0,20
 0,22 
0,22
µs
µs
µs
0,14
 0,15 
0,15
µs
µs
µs
0,70
 0,80 
0,85
µs
µs
µs
0,20
 0,40 
0,45
µs
µs
µs
71,0 mJ
 100  mJ
105 mJ
125 mJ
 160  mJ
175 mJ
 3600 
A
  29,5 K/kW
 14,0
K/kW
-40  150 °C
preparedby:AC
approvedby:MS
dateofpublication:2013-11-05
revision:2.4
2


Part Number FF900R12IP4
Description IGBT
Maker Infineon
Total Page 9 Pages
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