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Infineon Technologies Electronic Components Datasheet

FF900R12ME7_B11 Datasheet

IGBT

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FF900R12ME7_B11
EconoDUAL™3ModulmitTRENCHSTOP™IGBT7undEmitterControlled7DiodeundNTC
EconoDUAL™3modulewithTRENCHSTOP™IGBT7andEmitterControlled7diodeandNTC
PotentielleAnwendungen
• Hochleistungsumrichter
• Hybrid-Nutzfahrzeuge
• Motorantriebe
• Servoumrichter
• USV-Systeme
ElektrischeEigenschaften
• IntegrierterTemperatursensor
• TrenchstopTMIGBT7
• VCEsatmitpositivemTemperaturkoeffizienten
MechanischeEigenschaften
• HoheLeistungsdichte
• IsolierteBodenplatte
• PressFITVerbindungstechnik
• Standardgehäuse
VCES = 1200V
IC nom = 900A / ICRM = 1800A
PotentialApplications
• Highpowerconverters
• CommercialAgricultureVehicles
• Motordrives
• Servodrives
• UPSsystems
ElectricalFeatures
• Integratedtemperaturesensor
• TrenchstopTMIGBT7
• VCEsatwithpositivetemperaturecoefficient
MechanicalFeatures
• Highpowerdensity
• Isolatedbaseplate
• PressFITcontacttechnology
• Standardhousing
ModuleLabelCode
BarcodeCode128
DMX-Code
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
Digit
1-5
6-11
12-19
20-21
22-23
Datasheet
www.infineon.com
PleasereadtheImportantNoticeandWarningsattheendofthisdocument
V3.0
2019-12-20


Infineon Technologies Electronic Components Datasheet

FF900R12ME7_B11 Datasheet

IGBT

No Preview Available !

FF900R12ME7_B11
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
VCES 
1200
V
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 90°C, Tvj max = 175°C
ICDC 
900
A
GrenzeffektivstromderModulDC-Kontakte
MaximumRMSmoduleDC-terminalcurrent
TTerminal 90°C, TC = 90°C
TTerminal 105°C, TC = 90°C
ITRMS 
580
565
A
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM 
1800
A
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
VGES 
+/-20
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 900 A
VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 18,0 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 / 15 V, VCE = 600 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 100 kHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 100 kHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 900 A, VCE = 600 V
VGE = -15 / 15 V
RGon = 0,51
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 900 A, VCE = 600 V
VGE = -15 / 15 V
RGon = 0,51
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 900 A, VCE = 600 V
VGE = -15 / 15 V
RGoff = 0,51
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 900 A, VCE = 600 V
VGE = -15 / 15 V
RGoff = 0,51
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 900 A, VCE = 600 V, Lσ = 25 nH
di/dt = 6200 A/µs (Tvj = 175°C)
VGE = -15 / 15 V, RGon = 0,51
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 900 A, VCE = 600 V, Lσ = 25 nH
du/dt = 3000 V/µs (Tvj = 175°C)
VGE = -15 / 15 V, RGoff = 0,51
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Kurzschlußverhalten
SCdata
VGE 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
tP 8 µs, Tvj = 150°C
tP 6 µs, Tvj = 175°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
min. typ. max.
VCE sat
1,50 1,80 V
1,65
V
1,75
V
VGEth 5,15 5,80 6,45 V
QG
14,3
µC
RGint
0,5
Cies
122
nF
Cres
0,72
nF
ICES
0,1 mA
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
100 nA
0,41
µs
0,46
µs
0,49
µs
0,10
µs
0,11
µs
0,12
µs
0,55
µs
0,63
µs
0,69
µs
0,11
µs
0,23
µs
0,33
µs
89,0
mJ
138
mJ
170
mJ
89,0
mJ
130
mJ
158
mJ
3200
A
3000
A
0,0452 K/W
RthCH
0,0269
K/W
Tvj op -40
175 °C
Datasheet
2
V3.0
2019-12-20


Part Number FF900R12ME7_B11
Description IGBT
Maker Infineon
PDF Download

FF900R12ME7_B11 Datasheet PDF






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