900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Infineon Technologies Electronic Components Datasheet

FP30R06KE3 Datasheet

IGBT

No Preview Available !

TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FP30R06KE3
EconoPIM™2ModulmitTrench/FeldstopIGBT³undEmitterControlled3Diode
EconoPIM™2modulewithtrench/fieldstopIGBT³andEmitterControlled3diode
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 65°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj max = 175
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage

VorläufigeDaten
PreliminaryData
VCES 
IC nom
IC

ICRM 
Ptot 
VGES 
600
30
37
60
125
+/-20
V

A
A
A
W
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 30 A, VGE = 15 V
IC = 30 A, VGE = 15 V
IC = 30 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 0,43 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 600 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 30 A, VCE = 300 V
VGE = ±15 V
RGon = 56
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 30 A, VCE = 300 V
VGE = ±15 V
RGon = 56
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 30 A, VCE = 300 V
VGE = ±15 V
RGoff = 56
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 30 A, VCE = 300 V
VGE = ±15 V
RGoff = 56
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 30 A, VCE = 300 V, LS = 45 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 600 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 56
Tvj = 150°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 30 A, VCE = 300 V, LS = 45 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 2000 V/µs (Tvj = 150°C)Tvj = 125°C
RGoff = 56
Tvj = 150°C
Kurzschlußverhalten
SCdata
VGE 15 V, VCC = 360 V
VCEmax = VCES -LsCE ·di/dt
tP 8 µs, Tvj = 25°C
tP 6 µs, Tvj = 150°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

VCE sat
VGEth
QG
RGint
Cies
Cres
ICES
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
RthCH
Tvj op
min. typ. max.
1,55 2,00 V
1,70
V
1,80
V
4,9 5,8 6,5 V
 0,30  µC
 0,0 
 1,65  nF
 0,051  nF

 1,0 mA

 400 nA
0,10
µs
 0,10  µs
0,10
µs
0,06
µs
 0,065  µs
0,07
µs
0,60
µs
 0,65  µs
0,70
µs
0,04
µs
 0,045  µs
0,05
µs
1,40
mJ
 1,70  mJ
1,80
mJ
1,00
mJ
 1,15  mJ
1,20
mJ

210
150

A
A

 1,20 K/W
 0,40
K/W
-40  150 °C
preparedby:AS
approvedby:WR
dateofpublication:2013-10-03
revision:2.0
1


Infineon Technologies Electronic Components Datasheet

FP30R06KE3 Datasheet

IGBT

No Preview Available !

TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FP30R06KE3
Diode,Wechselrichter/Diode,Inverter
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
Tvj = 25°C
Dauergleichstrom
ContinuousDCforwardcurrent

PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent
tP = 1 ms
Grenzlastintegral
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
CharakteristischeWerte/CharacteristicValues
Durchlassspannung
Forwardvoltage
IF = 30 A, VGE = 0 V
IF = 30 A, VGE = 0 V
IF = 30 A, VGE = 0 V
Rückstromspitze
Peakreverserecoverycurrent
IF = 30 A, - diF/dt = 600 A/µs (Tvj=150°C)
VR = 300 V
VGE = -15 V
Sperrverzögerungsladung
Recoveredcharge
IF = 30 A, - diF/dt = 600 A/µs (Tvj=150°C)
VR = 300 V
VGE = -15 V
AbschaltenergieproPuls
Reverserecoveryenergy
IF = 30 A, - diF/dt = 600 A/µs (Tvj=150°C)
VR = 300 V
VGE = -15 V
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proDiode/perdiode
Wärmewiderstand,GehäusebisKühlkörper proDiode/perdiode
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VorläufigeDaten
PreliminaryData
VRRM 
600
V
IF 
30
A
IFRM 
I²t 
60
90,0
82,0
A

A²s
A²s
VF
IRM
Qr
Erec
RthJC
min. typ. max.
1,60 2,05 V
1,55
V
1,50
V
22,0
A
 24,0  A
27,0
A
1,15
µC
 2,30  µC
2,70
µC
0,12
mJ
 0,30  mJ
0,36
mJ

 1,80 K/W
RthCH
 0,60
K/W
Tvj op -40

150 °C
Diode,Gleichrichter/Diode,Rectifier
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
Tvj = 25°C
DurchlassstromGrenzeffektivwertproChip
MaximumRMSforwardcurrentperchip
TC = 80°C
GleichrichterAusgangGrenzeffektivstrom
MaximumRMScurrentatrectifieroutput
TC = 80°C
StoßstromGrenzwert
Surgeforwardcurrent
tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C
Grenzlastintegral
I²t-value
tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C
CharakteristischeWerte/CharacteristicValues
Durchlassspannung
Forwardvoltage
Tvj = 150°C, IF = 30 A
Sperrstrom
Reversecurrent
Tvj = 150°C, VR = 1600 V
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proDiode/perdiode
Wärmewiderstand,GehäusebisKühlkörper proDiode/perdiode
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

VRRM 
1600
V
IFRMSM 
60
A
IRMSM 
IFSM 
I²t 
50
450
370
1000
685
A

A
A

A²s
A²s
min. typ. max.
VF
 0,90  V
IR
 1,00  mA
RthJC

 0,85 K/W
RthCH
 0,28
K/W
Tvj op -40

150 °C
preparedby:AS
approvedby:WR
dateofpublication:2013-10-03
revision:2.0
2


Part Number FP30R06KE3
Description IGBT
Maker Infineon
PDF Download

FP30R06KE3 Datasheet PDF






Similar Datasheet

1 FP30R06KE3 IGBT-Module
eupec
2 FP30R06KE3 IGBT
Infineon





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy