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Infineon Technologies Electronic Components Datasheet

FS800R07A2E3 Datasheet

IGBT-Module

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TechnischeInformation/TechnicalInformation
IGBT-Modul
IGBT-Module
FS800R07A2E3
HybridPACK™2ModulmitTrench/FeldstoppIGBT3undEmitterControlled3DiodeundNTC
HybridPACK™2modulewithTrench/FieldstopIGBT3andEmitterControlled3diodeandNTC
VCES = 650V
IC nom = 800A / ICRM = 1600A
T
T
T
TypischeAnwendungen
• AnwendungenimAutomobil
• Hybrid-Elektrofahrzeuge(H)EV
• Hybrid-Nutzfahrzeuge
• Motorantriebe
TypicalApplications
• AutomotiveApplications
• HybridElectricalVehicles(H)EV
• CommercialAgricultureVehicles
• MotorDrives
ElektrischeEigenschaften
• ErhöhteSperrspannungsfestigkeitauf650V
• HoheStromdichte
• NiederinduktivesDesign
• NiedrigeSchaltverluste
• Tvjop=150°C
• TrenchIGBT3
• VCEsatmitpositivemTemperaturkoeffizienten
ElectricalFeatures
• Increasedblockingvoltagecapabilityto650V
• HighCurrentDensity
• LowInductiveDesign
• LowSwitchingLosses
• Tvjop=150°C
• TrenchIGBT3
• VCEsatwithpositiveTemperatureCoefficient
MechanischeEigenschaften
• 2,5kVAC1minIsolationsfestigkeit
• DirektgekühlteBodenplatte
• HoheLeistungsdichte
• IntegrierterNTCTemperaturSensor
• IsolierteBodenplatte
• Kupferbodenplatte
• RoHSkonform
MechanicalFeatures
• 2.5kVAC1minInsulation
• DirectCooledBasePlate
• HighPowerDensity
• IntegratedNTCtemperaturesensor
• IsolatedBasePlate
• CopperBasePlate
• RoHScompliant
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:WJ
approvedby:MM
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
dateofpublication:2014-10-30
revision:3.2
1
Digit
1-5
6-11
12-19
20-21
22-23


Infineon Technologies Electronic Components Datasheet

FS800R07A2E3 Datasheet

IGBT-Module

No Preview Available !

TechnischeInformation/TechnicalInformation
IGBT-Modul
IGBT-Module
FS800R07A2E3
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
ImplementierterKollektor-Strom
Implementedcollectorcurrent
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TF = 75°C, Tvj max = 175°C
TF = 25°C, Tvj max = 175°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung
Totalpowerdissipation
TF = 25°C, Tvj max = 175°C
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
VCES 
ICN 
IC nom
IC

ICRM 
Ptot 
VGES 
650
800
550
700
1600
1500
+/-20
V
A

A
A
A
W
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 550 A, VGE = 15 V
IC = 550 A, VGE = 15 V
IC = 550 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 13,0 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 650 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 550 A, VCE = 300 V
VGE = ±15 V
RGon = 1,8
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 550 A, VCE = 300 V
VGE = ±15 V
RGon = 1,8
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 550 A, VCE = 300 V
VGE = ±15 V
RGoff = 0,75
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 550 A, VCE = 300 V
VGE = ±15 V
RGoff = 0,75
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 550 A, VCE = 300 V, LS = 20 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 5500 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 1,8
Tvj = 150°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 550 A, VCE = 300 V, LS = 20 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 2700 V/µs (Tvj = 150°C)Tvj = 125°C
RGoff = 0,75
Tvj = 150°C
Kurzschlußverhalten
SCdata
VGE 15 V, VCC = 360 V
VCEmax = VCES -LsCE ·di/dt
tP 8 µs, Tvj = 25°C
tP 6 µs, Tvj = 150°C
Wärmewiderstand,ChipbisKühl-Flüssigkeit proIGBT/perIGBT
Thermalresistance,junctiontocoolingfluid coolingfluid=50%water/50%ethylenglycol;V/t=
10,0dm³/min
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
preparedby:WJ
approvedby:MM
dateofpublication:2014-10-30
revision:3.2
VCE sat
min. typ. max.
1,30 1,60
1,35
1,40
V
V
V
VGEth 4,90 5,80 6,50 V
QG
RGint
8,60 µC
0,5
Cies 52,0 nF
Cres 1,50 nF
ICES 5,0 mA
IGES 400 nA
td on
0,12 µs
0,12 µs
0,13 µs
tr
0,10 µs
0,10 µs
0,10 µs
td off
0,51 µs
0,53 µs
0,55 µs
tf
0,04 µs
0,06 µs
0,07 µs
10,5 mJ
Eon 12,0 mJ
12,5 mJ
21,0 mJ
Eoff 25,0 mJ
26,0 mJ
ISC
5600
4000
A
A
RthJF
0,10 K/W
Tvj op
-40
150 °C
2


Part Number FS800R07A2E3
Description IGBT-Module
Maker Infineon
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FS800R07A2E3 Datasheet PDF






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