FZ1000R33HE3 Datasheet IGBT

Manufacturer: Infineon

Overview: FZ1000R33HE3 IHM-BModulmitschnellemTrench/FeldstoppIGBT3undEmitterControlled3Diode IHM-BmodulewithfastTrench/FieldstopIGBT3andEmitterControlled3diode VCES = 3300V IC nom = 1000A / ICRM = 2000A.

Datasheet Details

Part number	FZ1000R33HE3
Manufacturer	Infineon
File Size	510.41 KB
Description	IGBT
Datasheet	FZ1000R33HE3-Infineon.pdf

Key Features

High DC stability.
High short-circuit capability.
Low switching losses.
Low VCEsat.
Unbeatable robustness.
Tvj op = 150°C.
VCEsat with positive temperature coefficient Mechanical Features.
AlSiC base plate for increased thermal cycling capability.
Package with CTI > 600.
IHM B housing.
Isolated base plate Module Label Code Barcode Code 128 DMX - Code Content of the Code Module Serial Number Mod.

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