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FZ1200R45HL3_S7 - IGBT-Module

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Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 1.10 2021-11-02 FZ1200R45HL3_S7 IHM-B module Table of contents Table of contents Description

Features

  • Electrical features - VCES = 4500 V - IC nom = 1200 A / ICRM = 2400 A - High DC stability - High short-circuit capability - High dynamic robustness - Low VCE,sat - Trench IGBT 3 - VCE,sat with positive temperature coefficient.
  • Mechanical features - AlSiC base plate for increased thermal cycling capability - Package with CTI > 600 - IHM B housing - Isolated base plate - Standard housing Potential.

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Datasheet Details

Part number FZ1200R45HL3_S7
Manufacturer Infineon
File Size 672.40 KB
Description IGBT-Module
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FZ1200R45HL3_S7 IHM-B module IHM-B module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode Features • Electrical features - VCES = 4500 V - IC nom = 1200 A / ICRM = 2400 A - High DC stability - High short-circuit capability - High dynamic robustness - Low VCE,sat - Trench IGBT 3 - VCE,sat with positive temperature coefficient • Mechanical features - AlSiC base plate for increased thermal cycling capability - Package with CTI > 600 - IHM B housing - Isolated base plate - Standard housing Potential applications • High-power converters • Medium-voltage converters • Power transmission and distribution Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet www.infineon.
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