IGP01N120H2
IGD01N120H2
HighSpeed 2-Technology
• Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
• 2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =1A
PG-TO-220-3-1
• Qualified according to JEDEC2 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-252-3-1
Type
IGP01N120H2
IGD01N120H2
VCE
IC
Eoff
Tj
1200V 1A 0.09mJ 150°C
1200V 1A 0.09mJ 150°C
Marking
G01H1202
G011HH11220022
Package
PG-TO-220-3-1
PG-TO-252-3-11
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector current
TC = 25°C, f = 140kHz
TC = 100°C, f = 140kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
Gate-emitter voltage
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature
PG-TO-252: Reflow soldering, MSL3
Others: wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
Ptot
Tj , Tstg
-
Value
1200
3.2
1.3
3.5
3.5
±20
28
-40...+150
260
260
Unit
V
A
V
W
°C
2 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.4 Sept. 07
