G01H1202 Datasheet | Infineon

IGP01N120H2 IGD01N120H2 High Speed 2-Technology - Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies - 2nd generation High Speed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =1A PG-TO-220-3-1 - Qualified according to JEDEC2 for target applications - Pb-free lead plating; Ro HS pliant - plete product spectrum and PSpice Models : http://.infineon./igbt/ E PG-TO-252-3-1 Type IGP01N120H2 IGD01N120H2 Eoff Tj 1200V 1A 0.09m J 150°C 1200V 1A 0.09m J 150°C Marking G01H1202 G011HH11220022 Package PG-TO-220-3-1 PG-TO-252-3-11 Maximum Ratings Parameter Collector-emitter voltage Triangular collector current TC = 25°C, f = 140k Hz TC = 100°C, f = 140k Hz Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Gate-emitter voltage Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature PG-TO-252: Reflow soldering, MSL3 Others: wavesoldering, 1.6 mm (0.063 in.) from case for 10s Symbol VCE IC ICpuls - VGE Ptot Tj , Tstg - Value Unit 3.5...