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Infineon Technologies Electronic Components Datasheet

G01H1202 Datasheet

HighSpeed 2-Technology

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IGP01N120H2
IGD01N120H2
HighSpeed 2-Technology
Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =1A
PG-TO-220-3-1
Qualified according to JEDEC2 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-252-3-1
Type
IGP01N120H2
IGD01N120H2
VCE
IC
Eoff
Tj
1200V 1A 0.09mJ 150°C
1200V 1A 0.09mJ 150°C
Marking
G01H1202
G011HH11220022
Package
PG-TO-220-3-1
PG-TO-252-3-11
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector current
TC = 25°C, f = 140kHz
TC = 100°C, f = 140kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150°C
Gate-emitter voltage
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature
PG-TO-252: Reflow soldering, MSL3
Others: wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
Ptot
Tj , Tstg
-
Value
1200
3.2
1.3
3.5
3.5
±20
28
-40...+150
260
260
Unit
V
A
V
W
°C
2 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.4 Sept. 07


Infineon Technologies Electronic Components Datasheet

G01H1202 Datasheet

HighSpeed 2-Technology

No Preview Available !

IGP01N120H2
IGD01N120H2
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB1)
Symbol
RthJC
RthJA
RthJA
Conditions
PG-TO-220-3-1
PG-TO-252-3-1
Max. Value
4.5
62
50
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
V(BR)CES
VCE(sat)
VGE(th)
ICES
IGES
gfs
Ciss
Coss
Crss
QGate
LE
VGE=0V, IC=300µA
VGE = 15V, IC=1A
Tj=25°C
Tj=150°C
VGE = 10V, IC=1A,
Tj=25°C
IC=30µA,VCE=VGE
VCE=1200V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=1A
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=1A
VGE=15V
min.
1200
-
-
-
2.1
-
-
-
-
-
-
-
-
-
Value
Unit
Typ. max.
- -V
2.2 2.8
2.5 -
2.4 -
3 3.9
µA
- 20
- 80
- 40 nA
0.75 - S
91.6
- pF
9.8 -
3.4 -
8.6 - nC
7 - nH
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
Power Semiconductors
2
Rev. 2.4 Sept. 07


Part Number G01H1202
Description HighSpeed 2-Technology
Maker Infineon
Total Page 13 Pages
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