G10N60A - Fast IGBT

Infineon

Datasheet Details

Part number	G10N60A
Manufacturer	Infineon
File Size	784.74 KB
Description	Fast IGBT
Datasheet	G10N60A Datasheet
Additional preview pages of the G10N60A datasheet.

📁 Similar Datasheet

G10N03 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G10N03S - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G1000LL250 - Anode-Shorted Gate Turn-Off Thyristor (IXYS)
G1000LM250 - Anode-Shorted Gate Turn-Off Thyristor (IXYS)
G1000NC450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
G1000NL450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
G1000QC250 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
G1000QC400 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
G1000QC450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
G1002 - N-Channel Enhancement Mode Power MOSFET (GOFORD)

Other Datasheets by Infineon

G10T60 - IGBT

Full PDF Text Transcription

Click to expand full text

SGB10N60A Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ C G E PG-TO-263-3-2 Type SGB10N60A VCE IC VCE(sat) Tj Marking Package 600V 10A 2.

Published: Nov 1, 2013 |