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Infineon Technologies Electronic Components Datasheet

G10N60A Datasheet

Fast IGBT

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SGB10N60A
Fast IGBT in NPT-technology
75% lower Eoff compared to previous generation
combined with low conduction losses
Short circuit withstand time – 10 µs
Designed for:
- Motor controls
- Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-263-3-2
Type
SGB10N60A
VCE
IC
VCE(sat)
Tj
Marking
Package
600V 10A
2.3V
150°C G10N60A PG-TO-263-3-2
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 600V, Tj 150°C
Gate-emitter voltage
Avalanche energy, single pulse
IC = 10 A, VCC = 50 V, RGE = 25 ,
start at Tj = 25°C
Short circuit withstand time2
VGE = 15V, VCC 600V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature (reflow soldering MSL1)
Symbol
VCE
IC
ICpuls
-
VGE
EAS
tSC
Ptot
Tj , Tstg
Value
Unit
600
V
A
20
10.6
40
40
±20
V
70
mJ
10
µs
92
W
-55...+150
°C
245
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.3 July 07


Infineon Technologies Electronic Components Datasheet

G10N60A Datasheet

Fast IGBT

No Preview Available !

SGB10N60A
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient1)
Symbol
RthJC
RthJA
Conditions
Max. Value
Unit
1.35
K/W
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
V(BR)CES
VCE(sat)
VGE(th)
ICES
IGES
gfs
VGE=0V, IC=500µA
VGE = 15V, IC=10A
Tj=25°C
Tj=150°C
IC=300µA,VCE=VGE
VCE=600V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=10A
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current2)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=480V, IC=10A
VGE=15V
VGE=15V,tSC10µs
VCC 600V,
Tj 150°C
min.
600
1.7
-
3
-
-
-
-
-
-
-
-
-
-
Value
Typ.
-
2
2.3
4
-
-
-
6.7
550
62
42
52
7
100
Unit
max.
-V
2.4
2.8
5
µA
40
1500
100 nA
-S
660 pF
75
51
68 nC
- nH
-A
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.3 July 07


Part Number G10N60A
Description Fast IGBT
Maker Infineon
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G10N60A Datasheet PDF






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