• Part: IAUC100N04S6N028
  • Description: Power Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 666.28 KB
Download IAUC100N04S6N028 Datasheet PDF
Infineon
IAUC100N04S6N028
IAUC100N04S6N028 is Power Transistor manufactured by Infineon.
OptiMOS™- 6 Power-Transistor Product Summary Features - OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 2.8 mW 100 A PG-TDSON-8 - N-channel - Enhancement mode - Normal Level - AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green Product (RoHS pliant) - 100% Avalanche tested Type Package IAUC100N04S6N028 PG-TDSON-8 Marking 6N04N028 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate...