IAUC50N08S5L096
IAUC50N08S5L096 is Power Transistor manufactured by Infineon.
OptiMOS™-5 Power Transistor
Features
- OptiMOS™ power MOSFET for automotive applications
- N-channel
- Enhancement mode
- Logic Level
- MSL1 up to 260°C peak reflow
- 175 °C operating temperature
- Green product (RoHS pliant)
- 100% Avalanche tested
Product Summary
VDS RDS(on),max
80 V 9.6 mW
50 A
PG-TDSON-8-33
1 1
Type IAUC50N08S5L096
Package PG-TDSON-8-33
Marking 5N08L096
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Drain current
Symbol
Conditions
V GS=10 V, Chip limitation1,2)
Pulsed drain current2) Avalanche energy, single pulse2)
I D,pulse E AS
V GS=10V, DC current
T a=85 °C, V GS=10 V, RthJA on 2s2p 2,3) T C=25 °C
I...
