IAUT300N08S5N012
OptiMOS™-5 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Product Summary
VDS
RDS(on)
ID
80 V
1.2 m
300 A
H-PSOF-8-1
Tab
8
1
Tab
1
8
Type
Package
IAUT300N08S5N012 P/G-HSOF-8-1
Marking
5N08012
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
ID
T C=25°C, V GS=10V1)
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2)
E AS
I D=150 A
Avalanche current, single pulse
I AS
-
Gate source voltage
V GS
-
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
Unit
300
A
300
1200
817
mJ
300
A
±20
V
375
W
-55 ... +175
°C
55/175/56
Rev. 1.0
page 1
2016-11-29
