IAUT300N08S5N011
IAUT300N08S5N011 is Power-Transistor manufactured by Infineon.
OptiMOS™-5 Power-Transistor
Features
- OptiMOS™ power MOSFET for automotive applications
- N-channel
- Enhancement mode
- Normal Level
- Extended qualification beyond AEC-Q101
- Enhanced electrical testing
- Robust design
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green product (RoHS pliant)
- 100% Avalanche tested
Product Summary VDS RDS(on) ID
80 V 1.1 mW 300 A
PG-HSOF-8-1 Tab
8 1 Tab
1 8
Type IAUT300N08S5N011
Package PG-HSOF-8-1
Marking 5N08011
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current Pulsed drain current2)
ID I D,pulse
T c=25 °C, V GS=10 V, Chip limitation1,2) V...
