IAUT300N08S5N012
IAUT300N08S5N012 is Power Transistor manufactured by Infineon.
OptiMOS™-5 Power-Transistor
Features
- N-channel
- Enhancement mode
- AEC qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green product (RoHS pliant)
- Ultra low Rds(on)
- 100% Avalanche tested
Product Summary VDS RDS(on) ID
80 V 1.2 mW 300 A
PG-HSOF-8-1 Tab
Tab
1 8
Type
Package
IAUT300N08S5N012 PG-HSOF-8-1
Marking 5N08012
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
T C=25°C, V GS=10V1)
T C=100 °C, V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2)
E...