• Part: IAUT300N08S5N012
  • Description: Power Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 306.48 KB
Download IAUT300N08S5N012 Datasheet PDF
Infineon
IAUT300N08S5N012
IAUT300N08S5N012 is Power Transistor manufactured by Infineon.
OptiMOS™-5 Power-Transistor Features - N-channel - Enhancement mode - AEC qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green product (RoHS pliant) - Ultra low Rds(on) - 100% Avalanche tested Product Summary VDS RDS(on) ID 80 V 1.2 mW 300 A PG-HSOF-8-1 Tab Tab 1 8 Type Package IAUT300N08S5N012 PG-HSOF-8-1 Marking 5N08012 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25°C, V GS=10V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse2) E...