IDDD04G65C6
IDDD04G65C6 is 650V SiC Schottky Diode manufactured by Infineon.
6th Generation Cool Si C™
650V Si C Schottky Diode
The Cool Si C™ generation G is the leading edge technology from Infineon for the Si C Schottky barrier diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a lower figure of merit (Qc x VF . The Cool Si C™ Schottky diode V G has been designed to plement our V and V Cool MOS™ families, meeting the most stringent application requirements in this voltage range.
Table 1
Key performance parameters
Parameter
Value
Unit
VRRM
QC (VR = 400 V)
6.9 n C
EC (VR = 400 V)
µJ
IF (TC ≤ 5 °C, D = 1)
VF (IF = 4 A, Tj = 25 °C)
Table 2
Package information
Type / ordering Code Package
PG-HDSOP-10-1
Marking D0465C6
PG-HDSOP-10-1
Cathode
Pin 6-10 Pin 3-5
Pin 1-2: n.c. Pin 3-5: Anode Pin 6-10: Cathode
Features
- Best in class forward voltage (1.25 V)
- Best in class figure of merit (Qc x VF)
- High dv/dt ruggedness (150 V/ns)
Benefits
- System efficiency...
