Overview: IDDD12G65C6 6th Generation CoolSiC™ 650V SiC Schottky Diode
The CoolSiC™ generation G is the leading edge technology from Infineon for the SiC Schottky barrier diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a lower figure of merit (Qc x VF . The CoolSiC™ Schottky diode V G has been designed to complement our V and V CoolMOS™ families, meeting the most stringent application requirements in this voltage range. Table 1 Key performance parameters Parameter Value Unit VRRM 650 V QC (VR = 400 V) 17.1 nC EC (VR = 400 V) 3.2 µJ IF (TC ≤ 0 °C, D = 1) 12 A VF (IF = 12 A, Tj = 25 °C) 1.25 V Table 2 Package information Type / ordering Code Package IDDD12G65C6 PG-HDSOP-10-1 Marking D1265C6 PG-HDSOP-10-1
Cathode Pin 6-10 Pin 3-5 Pin 1-2: n.c.
