Datasheet Details
| Part number | IDH08G65C5 |
|---|---|
| Manufacturer | Infineon |
| File Size | 1.14 MB |
| Description | SiC Schottky Diode |
| Datasheet |
 IDH08G65C5 Datasheet
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General Description
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thinwafer technology.
Key Features
- Revolutionary semiconductor material - Silicon Carbide.
- Benchmark switching behavior.
- No reverse recovery/ No forward recovery.
- Temperature independent switching behavior.
- High surge current capability.
- Pb-free lead plating; RoHS compliant.
- Qualified according to JEDEC1) for target.