Datasheet Details
| Part number | IDW20G65C5B |
|---|---|
| Manufacturer | Infineon |
| File Size | 731.14 KB |
| Description | Silicon Carbide Diode |
| Download | IDW20G65C5B Download (PDF) |
|
|
| Part number | IDW20G65C5B |
|---|---|
| Manufacturer | Infineon |
| File Size | 731.14 KB |
| Description | Silicon Carbide Diode |
| Download | IDW20G65C5B Download (PDF) |
|
|
|
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
A combination with a new, more compact design and thinwafer technology results is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.
SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDW20G65C5B Final Datasheet Rev.
2.0, 2015-04-13 Power Management & Multimarket 5th Generation thinQ!
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IDW20G65C5 | SiC Schottky Barrier diodes | Infineon Technologies |
| Part Number | Description |
|---|---|
| IDW20G120C5B | Silicon Carbide Schottky Diode |
| IDW20C65D2 | Diode |
| IDW24G65C5B | Silicon Carbide Diode |
| IDW10G120C5B | Silicon Carbide Schottky Diode |
| IDW15E65D2 | Diode |
| IDW15G120C5B | 1200 V SiC Schottky Diode |
| IDW30C65D1 | Diode |
| IDW30C65D2 | Diode |
| IDW30E60 | Fast Switching Emitter Controlled Diode |
| IDW30E65D1 | Rapid Switching Emitter Controlled Diode |