Download IDW20G65C5B Datasheet PDF
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IDW20G65C5B Key Features

  • Revolutionary semiconductor material
  • Silicon Carbide
  • Benchmark switching behavior
  • No reverse recovery/ No forward recovery
  • Temperature independent switching behavior
  • High surge current capability
  • Pb-free lead plating; RoHS pliant
  • Qualified according to JEDEC1) for target

Other IDW20G65C5B Datasheets

Manufacturer Part Number Description
Infineon Technologies Logo Infineon IDW20G65C5 SiC Schottky Barrier diodes

IDW20G65C5B Description

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. A bination with a new, more pact design and thinwafer technology results is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ Generation 5 has been designed to plement our 650V...