Datasheet Summary
SiC
Silicon Carbide Diode
5th Generation thinQ!TM
650V SiC Schottky Diode
Final Datasheet
Rev. 2.2, 2013-01-15
Power Management & Multimarket
5th Generation thinQ!™ SiC Schottky Diode
Description
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more pact design and thin-wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to plement our 650V CoolMOS™ families: this ensures meeting the most stringent application...
