IFS150B12N3E4_B31
Overview
- LowSwitchingLosses
- LowVCEsat
- Tvjop=150°C MechanicalFeatures
- HighPowerandThermalCyclingCapability
- IsolatedBasePlate
- CopperBasePlate
- StandardHousing ModuleLabelCode BarcodeCode128 DMX-Code preparedby:CM approvedby:MS ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit 1-5 6-11 12-19 20-21 22-23 dateofpublication:2013-03-06 revision:2.0 ULapproved(E83335) 1 TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules IFS150B12N3E4_B31 IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 90°C, Tvj = 175°C PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj = 175°C Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VorläufigeDaten PreliminaryData VCES IC nom ICRM Ptot VGES
