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Infineon Technologies Electronic Components Datasheet

IFS75B12N3E4_B31 Datasheet

IGBT-Module

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TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
IFS75B12N3E4_B31
MIPAQ™baseModulmitTrench/FeldstoppIGBT4,EmitterControlled4DiodeundStrommesswiderstand
MIPAQ™basemodulewithtrench/fieldstopIGBT4,emittercontrolled4diodeandcurrentsenseshunt
IGBT,Wechselrichter/IGBT,Inverter VorläufigeDaten/PreliminaryData
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
VCES 
1200
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 95°C, Tvj = 175°C
IC nom 
75
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM 
150
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj = 175°C
Ptot 
385
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage

VGES 
+/-20
V
A
A
W
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 75 A, VGE = 15 V
IC = 75 A, VGE = 15 V
IC = 75 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 2,40 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 75 A, VCE = 600 V
VGE = ±15 V
RGon = 2,2
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 75 A, VCE = 600 V
VGE = ±15 V
RGon = 2,2
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 75 A, VCE = 600 V
VGE = ±15 V
RGoff = 2,2
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 75 A, VCE = 600 V
VGE = ±15 V
RGoff = 2,2
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 75 A, VCE = 600 V, LS = 25 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 2500 A/µs (Tvj=150°C) Tvj = 125°C
RGon = 2,2
Tvj = 150°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 75 A, VCE = 600 V, LS = 25 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 3100 V/µs (Tvj=150°C) Tvj = 125°C
RGoff = 2,2
Tvj = 150°C
Kurzschlußverhalten
SCdata
VGE 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
tP 10 µs, Tvj = 150°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
VCE sat
VGEth
QG
RGint
Cies
Cres
ICES
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
RthCH
min. typ. max.
1,85 2,15
2,10
2,15
V
V
V
5,2 5,8 6,4 V
 0,57  µC
 10 
 4,30  nF
 0,16  nF
  1,0 mA
  100 nA
0,13
 0,15 
0,15
0,02
 0,03 
0,035
0,33
 0,42 
0,44
0,06
 0,11 
0,13
4,70
 7,20 
8,00
4,70
 7,70 
8,40
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ
mJ
mJ
 300 
A
  0,39 K/W
 0,195
K/W
preparedby:CM
approvedby:MS
dateofpublication:2013-03-06
revision:2.0
1


Infineon Technologies Electronic Components Datasheet

IFS75B12N3E4_B31 Datasheet

IGBT-Module

No Preview Available !

TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
IFS75B12N3E4_B31
Diode,Wechselrichter/Diode,Inverter
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
Tvj = 25°C
Dauergleichstrom
ContinuousDCforwardcurrent

PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent
tP = 1 ms
Grenzlastintegral
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
CharakteristischeWerte/CharacteristicValues
Durchlassspannung
Forwardvoltage
IF = 75 A, VGE = 0 V
IF = 75 A, VGE = 0 V
IF = 75 A, VGE = 0 V
Rückstromspitze
Peakreverserecoverycurrent
IF = 75 A, - diF/dt = 2500 A/µs (Tvj=150°C)
VR = 600 V
VGE = -15 V
Sperrverzögerungsladung
Recoveredcharge
IF = 75 A, - diF/dt = 2500 A/µs (Tvj=150°C)
VR = 600 V
VGE = -15 V
AbschaltenergieproPuls
Reverserecoveryenergy
IF = 75 A, - diF/dt = 2500 A/µs (Tvj=150°C)
VR = 600 V
VGE = -15 V
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proDiode/perdiode
Wärmewiderstand,GehäusebisKühlkörper proDiode/perdiode
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VorläufigeDaten
PreliminaryData
VRRM 
IF 
IFRM 
I²t 
1200
75
150
960
V
A
A
 A²s
VF
IRM
Qr
Erec
RthJC
min. typ. max.
1,70 2,15
1,65
1,65
V
V
V
115
 120 
125
A
A
A
8,60 µC
 14,0  µC
16,0 µC
2,60 mJ
 4,50  mJ
5,50 mJ
  0,62 K/W
RthCH
 0,31
K/W
Strommesswiderstand/Shunt
Nennwiderstand
Ratedresistance
Tc = 20°C
Temperaturkoeffizient
Temperaturecoefficient(tcr)
20°C - 60°C
BetriebstemperaturShunt-Widerstand
Operationtemperatureshunt-resistor
Wärmewiderstand,ChipbisGehäuse
Thermalresistance;junktiontocase
min. typ. max.
R20  2,40  m
Ttvjop
< 30
ppm/K
 200 °C
RthJC
13,0 K/W
NTC-Widerstand/NTC-Thermistor
CharakteristischeWerte/CharacteristicValues
Nennwiderstand
Ratedresistance
TC = 25°C
AbweichungvonR100
DeviationofR100
TC = 100°C, R100 = 493
Verlustleistung
Powerdissipation
TC = 25°C
B-Wert
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B-Wert
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B-Wert
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
AngabengemäßgültigerApplicationNote.
Specificationaccordingtothevalidapplicationnote.
preparedby:CM
approvedby:MS
dateofpublication:2013-03-06
revision:2.0
2
min. typ. max.
R25  5,00  k
R/R -5

5%
P25   20,0 mW
B25/50
 3375 
K
B25/80
 3411 
K
B25/100
 3433 
K


Part Number IFS75B12N3E4_B31
Description IGBT-Module
Maker Infineon
Total Page 8 Pages
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