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IGB50N65S5 - IGBT

Description

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Features

  • High speed S5 technology offering.
  • High speed smooth switching device for hard & soft switching.
  • Very Low VCEsat, 1.35V at nominal current.
  • Plug and play replacement of previous generation IGBTs.
  • 650V breakdown voltage.
  • Low QG.
  • Maximum junction temperature 175°C.
  • Pb-free lead plating; RoHS compliant.
  • Complete product spectrum and PSpice Models: http://www. infineon. com/igbt/ C G E C Potential.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGB50N65S5 Highspeedswitchingseriesfifthgeneration TRENCHSTOPTM5highspeedsoftswitchingIGBT  FeaturesandBenefits: HighspeedS5technologyoffering •Highspeedsmoothswitchingdeviceforhard&softswitching •VeryLowVCEsat,1.35Vatnominalcurrent •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowQG •Maximumjunctiontemperature175°C •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.
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