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High Speed IGBT3 Chip
IGC31T65QE
Features: 650V Trench & Field Stop technology high speed switching series third
generation low VCE(sat) low EMI low turn-off losses positive temperature coefficient qualified according to JEDEC for target
applications
Recommended for: discrete components and
modules
Applications: uninterruptible power supplies welding converters converters with high switching
frequency
C
G E
Chip Type
VCE
ICn1)
Die Size
Package
IGC31T65QE 650V 60A 6.67 x 4.69 mm2
sawn on foil
1 ) nominal collector current at Tc = 100°C, not subject to production test - verified by design/characterization
Mechanical Parameters Die size Emitter pad size Gate pad size
6.67 x 4.69 See chip drawing
0.446 x 0.722
mm2
Area total Thickness Wafer size Max.
IGC31T65QE Datasheet
