IGC36T120T6L Datasheet Text
IGBT4 Low Power Chip
Features
:
- 1200V Trench + Field Stop technology
- low switching losses
- positive temperature coefficient
- easy paralleling
This chip is used for:
- low / medium power modules
Applications:
- low / medium power drives
C G
E
Chip Type IGC36T120T6L
VCE ICn 1200V 35A
Die Size 6.36 x 5.67 mm2
Package sawn on foil
MECHANICAL PARAMETER Raster size Emitter pad size Gate pad size Area total / active Thickness Wafe r size Flat position Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Remended storage environment
6.36 x 5.67
2 x ( 1.95 x 4.18 ) 0.826 x 1.31 mm 2
36.1 / 24.2
115 µm
150 mm
90 grd
399
Photoimide
3200 nm AlSiCu...