IGC70T120T6RM
IGC70T120T6RM is IGBT manufactured by Infineon.
FEATURES
:
- 1200V Trench + Field Stop technology
- low switching losses
- soft turn off
- positive temperature coefficient
- easy paralleling
This chip is used for:
- medium power modules
Applications:
- medium power drives
Chip Type
VCE ICn
IGC70T120T6RM 1200V 75A
Die Size 9.12 x 7.71 mm2
Package sawn on foil
MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Remended storage environment
9.12 x 7.71
7.61 x 6.24 1.31 x 0.81 mm 2
70.3 / 51.6
120 µm
150 mm
90 grd
Photoimide
3200 nm Al Si Cu
Ni Ag
- system suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
Store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C
Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7673B, Edition 1, 31.10 .20 07
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