• Part: IGC70T120T6RM
  • Description: IGBT
  • Manufacturer: Infineon
  • Size: 69.29 KB
Download IGC70T120T6RM Datasheet PDF
Infineon
IGC70T120T6RM
IGC70T120T6RM is IGBT manufactured by Infineon.
FEATURES : - 1200V Trench + Field Stop technology - low switching losses - soft turn off - positive temperature coefficient - easy paralleling This chip is used for: - medium power modules Applications: - medium power drives Chip Type VCE ICn IGC70T120T6RM 1200V 75A Die Size 9.12 x 7.71 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Remended storage environment 9.12 x 7.71 7.61 x 6.24 1.31 x 0.81 mm 2 70.3 / 51.6 120 µm 150 mm 90 grd Photoimide 3200 nm Al Si Cu Ni Ag - system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm Store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7673B, Edition 1, 31.10 .20 07 MAXIMUM RATINGS Parameter Symbol Value...