IGC70T120T6RM Datasheet Text
IGC70T120T6RM
IGBT4 Medium Power Chip
Features
:
- 1200V Trench + Field Stop technology
- low switching losses
- soft turn off
- positive temperature coefficient
- easy paralleling
This chip is used for:
- medium power modules
Applications:
- medium power drives
C G
E
Chip Type
VCE ICn
IGC70T120T6RM 1200V 75A
Die Size 9.12 x 7.71 mm2
Package sawn on foil
MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Remended storage environment
9.12 x 7.71
7.61 x 6.24 1.31 x 0.81 mm 2
70.3 / 51.6
120 µm
150 mm
90 grd...