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IGC99T120T6RH
IGBT4 High Power Chip
FEATURES:
• 1200V Trench + Field Stop technology • low VCE(sat) • soft turn off
• positive temperature coefficient • easy paralleling
This chip is used for: • medium / high power modules
Applications: • medium / high power drives
C G
E
Chip Type
VCE ICn
Die Size
IGC99T120T6RH 1200V 100A 10.39 x 9.5 mm2
Package sawn on foil
MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
10.39 x 9.5
7.987 x 8.923 1.31 x 0.811
mm 2
98.7 / 76.
IGC99T120T6RH Datasheet
