IGLD60R190D1 Datasheet | Infineon

600V Cool Ga N™ enhancement-mode Power Transistor Features - Enhancement mode transistor - Normally OFF switch - Ultra fast switching - No reverse-recovery charge - Capable of reverse conduction - Low gate charge, low output charge - Superior mutation ruggedness - Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits - Improves system efficiency - Improves power density - Enables higher operating frequency - System cost reduction savings - Reduces EMI G SK S S S S SK G Gate Drain Kelvin Source Source 8 1,2,3,4 7 5,6 Applications SMPS and high density chargers based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC and flyback). For other applications: review Cool Ga N™ reliability white paper and contact Infineon regional support Table 1 Parameter VDS,max RDS(on),max QG,typ ID,pulse Qoss @ 400 V Qrr Key Performance Parameters at Tj = 25 °C Value Unit 190...