IGLD60R190D1S
Features
- Enhancement mode transistor
- Normally OFF switch
- Ultra fast switching
- No reverse-recovery charge
- Capable of reverse conduction
- Low gate charge, low output charge
- Superior mutation ruggedness
- Qualified for standard grade applications according to JEDEC
Standards
Benefits
- Improves system efficiency
- Improves power density
- Enables higher operating frequency
- System cost reduction savings
- Reduces EMI
G SK S S
S S SK G
Gate Drain Kelvin Source Source
8 1,2,3,4
7 5,6
Applications
Consumer SMPS and high density chargers based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC and flyback). For other applications: review Cool Ga N™ reliability white paper and contact Infineon regional support
Table 1
Parameter VDS,max RDS(on),max QG,typ ID,pulse Qoss @ 400 V Qrr
Key Performance Parameters at Tj = 25 °C
Value
Unit
190 mΩ
3.2 n C
16 n C
0 n C
Table...
