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IGLD60R190D1
IGLD60R190D1
600V CoolGaN™ enhancement-mode Power Transistor
Features
Enhancement mode transistor – Normally OFF switch Ultra fast switching No reverse-recovery charge Capable of reverse conduction Low gate charge, low output charge Superior commutation ruggedness Qualified for industrial applications according to JEDEC
Standards (JESD47 and JESD22)
Benefits
Improves system efficiency Improves power density Enables higher operating frequency System cost reduction savings Reduces EMI
D D D D
1
G SK S S
S S SK G
8
Gate Drain Kelvin Source Source
8 1,2,3,4
7 5,6
Applications
SMPS and high density chargers based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC and flyback).
IGLD60R190D1 Datasheet
